Diode-pumped Femtosecond Yb:YAl3(BO3)4 Laser Passively Mode-locked by an Ion- Implanted SESAM

M.J. Lederer; M. Hildebrandt; V.Z. Kolev; B. Luther-Davies; B. Taylor; J. Dawes; P. Dekker; J. Piper; H.H. Tan; C. Jagadish

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2002),
paper CWA43

Diode-pumped Femtosecond Yb:YAl₃(BO₃)₄ Laser Passively Mode-locked by an Ion- Implanted SESAM

M.J. Lederer, M. Hildebrandt, V.Z. Kolev, B. Luther-Davies, B. Taylor, J. Dawes, P. Dekker, J. Piper, H.H. Tan, and C. Jagadish

Conference on Lasers and Electro-Optics 2002

Long Beach, California United States
19–22 May 2002
ISBN: 1-55752-706-7

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Poster Session: 2 (CWA)

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M. J. Lederer, M. Hildebrandt, V. Z. Kolev, B. Luther-Davies, B. Taylor, J. Dawes, P. Dekker, J. Piper, H. H. Tan, and C. Jagadish, "Diode-pumped Femtosecond Yb:YAl3(BO3)4 Laser Passively Mode-locked by an Ion- Implanted SESAM," in Conference on Lasers and Electro-Optics, M. Fejer, F. Leonberger, J. Fujimoto, and S. Newton, eds., OSA Technical Digest (Optica Publishing Group, 2002), paper CWA43.

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Abstract

Due to their broadband fluorescence (δλ_FWHM > 10 nni) Ytterbium (Yb³⁺) doped laser crystals allow tuning and/or femtosecond generation around λ = 1040 nm. Their high quantum efficiency and small quantum defect (<0.1) are further advantages in the construction of an efficient diode-pumped femtosecond source. Some examples of passively mode-locked Yb³⁴-doped lasers include Yb:YAG,¹ Yb:KGW² and Yb:GdCOB.³

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