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Conferences > CLEO > 2002 > CWA > CWA50
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 2002),
  • paper CWA50

Nonlinear Behaviors of LTG-GaAs Based MSM TWPDs Linder Telecommunication Wavelength Excitation

Jin-Wei Shi, Kian-Giap Gan, Yen-Hung Chen, Yi-Jen Chiu, John. E. Bowers, and Chi-Kuang Sun

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Abstract

Recently, the development of optical amplifier has created a new demand for high available power in ultra-high speed photodetectors. However, these ultrahigh bandwidth photodetectors usually suffer bandwidth degradation problems under intense optical power illumination.1 Low- temperature-grown-GaAs (LTG-GaAs) based photodetector is the most attractive one among the ultrahigh speed photodetectors with high available output power.2 Recently, record-high power-bandwidth-product performances of LTG-GaAs-based metal-semiconductor-metal traveling-wave-photodetector (MSM TWPD)3 in short (~800 nm) and long wavelength (~1300 nm) regimes both have been demonstrated15 due to short carrier trapping time of LTG-GaAs in both wavelengths and its superior microwave guiding structure.

© 2002 Optical Society of America

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