Abstract
Gallium arsenide has excellent potential as a nonlinear optical material in the mid-infrared, superior to PPLN in the sense of much higher second- order nonlinearity and much deeper infrared transparency. Recently, an all-epitaxial process for fabrication of orientation patterned (OP) structures in GaAs has been developed,1−3 and it has been shown that quasi-phase-matched (QPM) layers can be grown to a thickness of 0.5 mm and length of up to 2 cm with good quality.4 In this work we characterize the nonlinear optical properties of these crystals using SHG process.
© 2002 Optical Society of America
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