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Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CFH1

High conversion efficiency mass-limited laser plasma source for EUV lithography

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Abstract

EUV lithography requires a high-efficiency light source at 13nm that is free from debris. Our mass-limited tin material laser plasma source provides the highest conversion of laser-light to useful in-band EUV emission.

© 2003 Optical Society of America

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