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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CMI5

Terahertz wave emission from structures with Be-doped low-temperature-grown GaAs

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Abstract

We observe that n-GaAs terahertz emitters with as-grown Be-doped low-temperature-grown (LTG)-GaAs layers exhibits greater radiation power than devices with or without undoped LTG-GaAs layers and explain it by the enhanced electric field in the surface depletion layer.

© 2003 Optical Society of America

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