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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CThI3

Improved Temperature Characteristics in Quantum Dot Lasers with Indirect-Bandgap Barriers

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Abstract

This study demonstrates that a much higher characteristic-temperature can be achieved with quantum dot lasers of indirect barrier compared to those of direct barrier. The temperature dependence of threshold current is reduced because the injected carriers residing in the barrier at “high” temperatures recombine slowly.

© 2003 Optical Society of America

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