Characterization of near-stoichiometric 1% Mg-doped LiNbO3 fabricated by vapor transport equilibration

M. Katz; R. Route; A. Alexandrovski; M. Fejer; M. C. C. Custodio; D. H. Jundt

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Technical Digest (Optica Publishing Group, 2003),
paper CThT4

Characterization of near-stoichiometric 1% Mg-doped LiNbO₃ fabricated by vapor transport equilibration

M. Katz, R. Route, A. Alexandrovski, M. Fejer, M. C. C. Custodio, and D. H. Jundt

Conference on Lasers and Electro-Optics 2003

Baltimore, Maryland United States
1–6 June 2003
ISBN: 1-55752-733-4

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Optical Materials Fabrication and Characterization (CThT)

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M. Katz, R. Route, A. Alexandrovski, M. Fejer, M. C. C. Custodio, and D. H. Jundt, "Characterization of near-stoichiometric 1% Mg-doped LiNbO3 fabricated by vapor transport equilibration," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference, Technical Digest (Optica Publishing Group, 2003), paper CThT4.

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Abstract

Near-stoichiometric, 1% Mg-doped LiNbO₃ z-cut crystals have been fabricated by vapor transport equilibration treatment. Photogalvanic current, photoconductivity, photorefractive damage, absorption and the coercive field of those crystals have been investigated. The results of the studies will be reported.

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