Abstract

Long-wavelength GaInNAs lasers grown on GaAs are very attractive devices for the application of optical communication. Recently, excellent high temperature characteristics and low threshold current density operation have been reported^1)-7). However, the threshold current is still not low enough for practical applications at 1.3um region. This is mainly due to the difficulty of forming an effective current confinement structure. In this paper, we present successful operation of GaInP buried heterostructure devices emitting over 1.3um with very low threshold current ever reported. Organometallic vapor phase epitaxy (OMVPE) selective buried growth was used for the fabrication of the device.

© 2003 Optical Society of America