High-power 2.1 W CW-operation of 650 nm laser diodes grown by solid-source molecular beam epitaxy

A. T. Tukiainen; L. J. Toikkanen; I. A. T. Hirvonen; M. Pessa; P. L. Tihanyi

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Technical Digest (Optica Publishing Group, 2003),
paper CTuM29

High-power 2.1 W CW-operation of 650 nm laser diodes grown by solid-source molecular beam epitaxy

A. T. Tukiainen, L. J. Toikkanen, I. A. T. Hirvonen, M. Pessa, and P. L. Tihanyi

Conference on Lasers and Electro-Optics 2003

Baltimore, Maryland United States
1–6 June 2003
ISBN: 1-55752-733-4

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CLEO Poster Session I (CTuM)

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A. T. Tukiainen, L. J. Toikkanen, I. A. T. Hirvonen, M. Pessa, and P. L. Tihanyi, "High-power 2.1 W CW-operation of 650 nm laser diodes grown by solid-source molecular beam epitaxy," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference, Technical Digest (Optica Publishing Group, 2003), paper CTuM29.

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Abstract

We report on a very high-power red laser diodes producing over two watts continuous-wave operation. Preliminary tests show no catastrophic optical damage. Devices have a low threshold current density and high slope efficiency.

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