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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
  • Technical Digest (Optica Publishing Group, 2003),
  • paper CTuS5

Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as stressors

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InGaAs/GaAs quantum wells strained by self-assembled InAs quantum dots form quantum-well dots on a GaAs substrate. The linewidth, intensity and spatial homogeneity of the photoluminescence peak for the quantum-well dots are improved significantly compared with the self-assembled InAs quantum dots.

© 2003 Optical Society of America

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