Abstract
We report room-temperature photoluminescence from a Nd3+-doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd3+ ions.
© 2004 Optical Society of America
PDF ArticleMore Like This
Wenhao Li, Zhengping Wu, and Weihua Tang
s1277 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2017
Myo Thaik, J. T. Seo, U. Hömmerich, C. R. Abernathy, S. J. Pearton, J. D. MacKenzie, R. G. Wilson, and J. M. Zavada
CThK38 Conference on Lasers and Electro-Optics (CLEO:S&I) 1999
J. Saikawa, Y. Sato, I. Shoji, T. Taira, and A. Ikesue
TuB17 Advanced Solid-State Photonics (ASSL) 2004