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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CMR2

Room-temperature, mid-IR (λ = 4.7μm) electroluminescence from single-stage intersubband GaAs-based edge emitters

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Abstract

Strong room-temperature intersubband-emission is obtained at 4.7 microns by using deep quantum wells and high barriers in the active region. The emission linewidth is narrow (~20meV) and the 80K to 300K emission ratio is low (~2).

© 2004 Optical Society of America

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