GaInNAsSb/GaNAs VCSELs at 1.46µm

M. A. Wistey; S. R. Bank; H. B. Yuen; L. L. Goddard; J. S. Harris

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2004),
paper CTuJ3

GaInNAsSb/GaNAs VCSELs at 1.46µm

M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris

Conference on Lasers and Electro-Optics 2004

San Francisco, California United States
16–21 May 2004
ISBN: 1-55752-770-9

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Dilute Nitride Lasers (CTuJ)

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M. A. Wistey, S. R. Bank, H. B. Yuen, L. L. Goddard, and J. S. Harris, "GaInNAsSb/GaNAs VCSELs at 1.46µm," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2004), paper CTuJ3.

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Abstract

We present electrically pumped GaInNAsSb VCSELs at 1.46µm, the longest wavelength on GaAs to date. At –20C, pulsed at 0.1% duty cycle, the threshold current density was 4.5kA/cm², with a peak output power of 0.77mW.

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