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Conferences > CLEO > 2004 > CTuJ > CTuJ4
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CTuJ4

Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers

Leon Shterengas, Jeng-Ya Yeh, Luke J. Mawst, Nelson Tansu, and Gregory Belenky

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Abstract

Gain, loss and α-factor were measured in broad stripe 1.23µm InGaAs and 1.29µm InGaAsN single-QW lasers. Experiment shows that both differential gain with respect to current and α-factor tend to decrease in dilute-nitride devices compared with InGaAs-active lasers.

© 2004 Optical Society of America

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