Abstract
We studied the ultrafast response in metal–semiconductor–metal ultraviolet photodiodes fabricated on GaN. The best performance of a device with 1-μm finger width and spacing showed a 3.5-ps response. The pulse width broadened significantly as the optical energy increased.
© 2004 Optical Society of America
PDF ArticleMore Like This
J. Li, W. R. Donaldson, and T. Y. Hsiang
CMV1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2003
J. J. Kuta, H. M. van Driel, D. Landheer, and J. A. Adams
CWJ81 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993
M. Klingenstein, J. Kuhl, R. Notzel, K. Ploog, J. Rosenzweig, C. Moglestue, A. Hülsmann, and J. Schneider
JFD8 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992