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Conferences > CLEO > 2004 > CWN > CWN3
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2004),
  • paper CWN3

Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices

Yung-Chen Cheng, En-Chiang Lin, Meng-Kuo Chen, Cheng-Ming Wu, C. C. Yang, and Kung-Jen Ma

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Abstract

InGaN/GaN quantum well samples of various silicon doping conditions, including doping layers and concentrations, are compared in nano-structures and emission characteristics for design optimization. The best performance of barrier-doped samples originates from stronger carrier localization.

© 2004 Optical Society of America

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