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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper CMF5

Characteristics of Dilute-Nitride Quantum Well Lasers

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Abstract

Optimizing the MOCVD growth of InGaAsN has yielded high performance 1.3 µm-emitting lasers, displaying reduced temperature sensitivity compared with InP-based structures. Studies reveal the impact of nitrogen on the gain, carrier confinement, and laser characteristics.

© 2005 Optical Society of America

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