Temperature dependent performance of 1.55 µm AlGaInAs laser diodes

C. Yang; A. Stinz; L. Lester; K. J. Malloy

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2005),
paper CMFF4

Temperature dependent performance of 1.55 µm AlGaInAs laser diodes

C. Yang, A. Stinz, L. Lester, and K. J. Malloy

Conference on Lasers and Electro-Optics 2005

Baltimore, Maryland United States
22–27 May 2005
ISBN: 1-55752-770-9

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Fabrication and Novel Resonators (CMFF)

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C. Yang, A. Stinz, L. Lester, and K. J. Malloy, "Temperature dependent performance of 1.55 µm AlGaInAs laser diodes," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2005), paper CMFF4.

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Abstract

1.55 µm AlGaInAs multi-quantum-well lasers with varying quantum well strain and number of quantum wells are studied. Results show that high strain and more quantum wells lead to a high T₀ and high injection efficiency.

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