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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper CMG3

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

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We report fast modulation (> 30 GHz) in a SOI resonant cavity using integrated Bragg mirrors and a Gate-All-Around transistor as active element. Modulation depth > 90% can be obtained in 12.5 µm long devices.

© 2005 Optical Society of America

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