Optical Properties of SiOx Nanostructured Films by Pulsed-Laser Deposition

X.Y. Chen; Y.F. Lu

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2005),
paper CThL4

Optical Properties of SiO_x Nanostructured Films by Pulsed-Laser Deposition

X.Y. Chen and Y.F. Lu

Conference on Lasers and Electro-Optics 2005

Baltimore, Maryland United States
22–27 May 2005
ISBN: 1-55752-770-9

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Laser Materials Processing (CThL)

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X. Y. Chen and Y. F. Lu, "Optical Properties of SiOx Nanostructured Films by Pulsed-Laser Deposition," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2005), paper CThL4.

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Abstract

SiO_x nanostructured films were formed by pulsed-laser deposition (PLD) of Si. The photoluminescence band at 1.6– 2.1 eV shifts with ambient gas pressure, substrate temperature and post-deposition processing, which supports the quantum confinement effect theory.

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