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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper JWB32

Extended InGaAs/InGaAs Quantum Structures for Near Infrared Photodetection beyond 1.9μm

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Abstract

Extended InGaAs quantum structures were grown on InP substrate using two strain compensation techniques by molecular beam epitaxy. The material quality was characteriazed and the absorption coefficient was measured with transmission spectroscopy.

© 2005 Optical Society of America

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