Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CFG3

High Power Single Mode Lasers based on InAs/GalnAs Quantum Dot Material with Enhanced Temperature Stability

Not Accessible

Your library or personal account may give you access

Abstract

High power 915 nm quantum dot lasers with increased temperature stability of the emission wavelength (< 0.1 nm/K) were realized. By application of a lateral grating to tapered lasers a single mode emission of > 400 mW was achieved.

© 2006 Optical Society of America

PDF Article
More Like This
Comparative gain measurement study of high power quantum well and quantum dot lasers with high temperature stability of the emission wavelength

R. Debusmann, W. Kaiser, S. Höfling, and A. Forchel
CB6_1 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2007

High Characteristic Temperature of p-doped InAs Quantum Dots-in-a-Well Lasers on InP Substrate

Y. Li, T. J. Rotter, Y. C. Xin, A. Stinz, A. Martinez, K. J. Malloy, S. Patterson, and L. F. Lester
CThX6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

High power (3W) GaInAs/(Al)GaAs quantum dot tapered laser arrays with high wavelength stability and low divergence

S.-C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel
CTuP10 Conference on Lasers and Electro-Optics (CLEO:S&I) 2004

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.