Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CMJJ4

Ultrafast Intersubband Optical Switches in II-VI-based Quantum-Well Waveguide with Separate Confinement Heterostructure

Not Accessible

Your library or personal account may give you access

Abstract

Sub-picosecond all-optical switching at telecommunication wavelengths has been demonstrated by utilizing an intersubband transition of II-VI-based MQW fabricated in high-mesa waveguide devices with separate confinement heterostructure, where (CdS/ZnSe)/BeMgTe QW is employed as active layer.

© 2006 Optical Society of America

PDF Article
More Like This
High-Index-Contrast Buried-Waveguide for Intersubband Ultrafast All-Optical Switches Fabricated by Wafer Bonding Technology

K. Akita, R. Akimoto, G.W. Cong, T. Hasama, and H. Ishikawa
CThCC3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

Intersubband Transition Device Using AlN Waveguide with GaN/AlN Quantum Wells

Chaiyasit Kumtornkittikul, Norio Iizuka, Nobuo Suzuki, and Yoshiaki Nakano
CWD4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006

Ultrafast all-optical switching using intersubband transitions in InGaAs/AlAsSb quantum well structures

Haruhiko Yoshida, Teruo Mozume, Arup Neogi, Nikolai Georgiev, Tomoyuki Akiyama, Achanta Venu Gopal, Takasi Simoyama, Osamu Wada, and Hiroshi Ishikawa
WD2 Nonlinear Optics: Materials, Fundamentals and Applications (NLO) 2002

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved