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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CThB1

Microphotoluminescence around 1.5 pm from a Single InAs/InP(O01) Quantum Dot grown by MOVPE

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Abstract

InAs/InP(001) quantum dots emitting around 1.5 pm were grown by low-pressure metalorganic vapor phase epitaxy. We report here on the observation of exciton and biexciton microphotoluminescence from a single quantum dot.

© 2006 Optical Society of America

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