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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CTuDD1

The Light-Emitting Field Effect Transistor: A Novel Optoelectronic Device Concept

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Abstract

We report a semiconducting polymer light emitting field-effect transistor (LEFET) fabricated by employing a new “angled” evaporation technique to deposit the two electrodes (Ag for hole injection and Ca for electron injection). Under ambipolar conditions, recombination of electrons and holes resulted in the observation of a narrow zone of light emission within the channel. The emission zone moved across the channel as the gate bias was swept during collection of the transfer data.

© 2006 Optical Society of America

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