Growth of p-type ZnO and its application to ZnO LEDs

Seong-Ju Park

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2006),
paper CTuN1

Growth of p-type ZnO and its application to ZnO LEDs

Seong-Ju Park

Conference on Lasers and Electro-Optics 2006

Long Beach, California United States
21–26 May 2006
ISBN: 1-55752-813-6

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Wide-Bandgap LEDs (CTuN)

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S. Park, "Growth of p-type ZnO and its application to ZnO LEDs," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2006), paper CTuN1.

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Abstract

A UV ZnO light-emitting diode was realized by using a ZnO p-n homojunction. The ZnO LED showed clear rectification with a threshold voltage of 3.2 V and a UV light emission at 380 nm.

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