Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CTuR4

Parametrically Amplified Room Temperature 4.3-4.7 μm Gain-Switched Fe:ZnSe Laser

Not Accessible

Your library or personal account may give you access


Parametric amplification of a 4.3-4.7 µm microchip gain-switched Fe:ZnSe laser radiation is reported. As an amplifier medium, we have used a 2.92-µm-pumped OPA based on ZGP crystal. The single-pass amplification factor of 2 was achieved.

© 2006 Optical Society of America

PDF Article
More Like This
Room Temperature 3.9-4.5 μm Gain-Switched Lasing of Fe:ZnSe

J. Kernal, V.V. Fedorov, A. Gallian, S.B. Mirov, and V.V. Badikov
MD6 Advanced Solid-State Photonics (ASSP) 2006

Mid-IR (4 – 5 µm) Hybrid sub-GW Fe2+:ZnSe Femtosecond Laser System

Fedor Potemkin, Ekaterina Migal, Andrew Pushkin, Anatoliy Sirotkin, Vladimir Kozlovsky, Yuri Korostelin, Yuri Podmar’kov, Vladimir Firsov, Mikhail Frolov, and Vyacheslav Gordienko
CA_10_1 The European Conference on Lasers and Electro-Optics (CLEO_Europe) 2017

Room Temperature, Nanosecond, 60 mJ/pulse Fe:ZnSe Master Oscillator Power Amplifier System Operating over 3.6-5.2 µm

Dmitry Martyshkin, Krishna Karki, Vladimir Fedorov, and Sergey Mirov
AW4A.3 Advanced Solid State Lasers (ASSL) 2020


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription

Select as filters

Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved