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Conferences > CLEO > 2006 > CTuX > CTuX6
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper CTuX6

Low-threshold continuous-wave 1.55-μm GaInNAsSb lasers

S. R. Bank, H. P. Bae, H. B. Yuen, M. A. Wistey, L. L. Goddard, J. S. Harris, R. Kudrawiec, M. Gladysiewicz, M. Motyka, and J. Misiewicz

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Abstract

We present the first low-threshold 1.55-μm lasers grown on GaAs. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room-temperature, continuous-wave, threshold current density was 579 A/cm2 and peak output power was 130 mW.

© 2006 Optical Society of America

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