Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CMD6

InP / AlGaInP on GaAs Quantum Dot Lasers

Not Accessible

Your library or personal account may give you access


MOVPE grown InP q-dot lasers have low 300K threshold current density (195 Acm−2 for 2000mm long device) and T0=105K (10-85°C) for 725-740nm emission. Homogenous broadening appears to be more pronounced than in InGaAs q-dots.

© 2007 Optical Society of America

PDF Article
More Like This
InP/AlGaInP 730nm Emission Quantum Dot Lasers

M. S. Al-Ghamdi, P. M. Smowton, S. Shutts, M. Hutchings, P. Blood, and A. B. Krysa
CMV2 Conference on Lasers and Electro-Optics (CLEO) 2009

Origin of the temperature dependence of threshold current in InP/AlGaInP quantum dot lasers

P. M. Smowton, S. N. Elliott, S. Shutts, G. Michell, M. S. Al-Ghamdi, and A. B. Krysa
CFL1 CLEO: Science and Innovations (CLEO_SI) 2011

Opening up spectrum with InPAs quantum dot lasers

I. Karomi, S. Shutts, P. M. Smowton, and A. B. Krysa
SW4F.1 CLEO: Science and Innovations (CLEO_SI) 2015


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access Optica Member Subscription

Select as filters

Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved