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Conferences > CLEO > 2007 > CMF > CMF3
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CMF3

HVPE-grown n-InGaN/p-GaN Single Heterostructure LED With p-side Down

M.L. Reed, E.D. Readinger, A.V. Sampath, G.A. Garrett, H. Shen, M. Wraback, A. Syrkin, A. Usikov, and V.A. Dmitriev

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Abstract

An HVPE-grown n-InGaN/p-GaN single heterojunction LED with p-side down and emission at ~ 480nm has been demonstrated. Benefits of the p-down geometry for such an LED associated with polarity are discussed.

© 2007 Optical Society of America

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