Abstract
Tunnel-coupled pairs of InGaAs quantum well (QW) grown on top of InAs quantum dots (QDs) were optimized. All-epitaxial QDs-QW VCSELs demonstrated CW-mode lasing (Ith= 1.8mA, Pmax.= 0.7mW) at QD ground state emission wavelength, 1135nm.
© 2007 Optical Society of America
PDF ArticleMore Like This
B. I. Akca, A. Dana, A. Aydinli, M. Rossetti, L. Li, A. Fiore, and N. Dagli
CD_16 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2007
Xiaodong Mu, Yujie J. Ding, Boon S. Ooi, and Mark Hopkinson
JThD69 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007
J. A. Lott, N. N. Ledentsov, V. M. Ustinov, Zh. I. Alferov, and D. Bimberg
CTuH5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2001