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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CMM5

All-Epitaxial VCSELs with Tunnel-Coupled QDs-QW InAs- InGaAs Active Medium

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Abstract

Tunnel-coupled pairs of InGaAs quantum well (QW) grown on top of InAs quantum dots (QDs) were optimized. All-epitaxial QDs-QW VCSELs demonstrated CW-mode lasing (Ith= 1.8mA, Pmax.= 0.7mW) at QD ground state emission wavelength, 1135nm.

© 2007 Optical Society of America

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