N-rich and dilute-nitride GaNx(AsSb)1−x on InP substrates

L. J. Mawst; D. P. Xu; J. Y. T. Huang; J. H. Park; M. K. Rathi; T. F. Kuech

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
paper CMN4

N-rich and dilute-nitride GaN_x(AsSb)_1−x on InP substrates

L. J. Mawst, D. P. Xu, J. Y. T. Huang, J. H. Park, M. K. Rathi, and T. F. Kuech

Conference on Lasers and Electro-Optics 2007

Baltimore, Maryland United States
6–11 May 2007
ISBN: 1557528349

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Near-Infrared Semiconductor Materials (CMN)

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L. J. Mawst, D. P. Xu, J. Y. T. Huang, J. H. Park, M. K. Rathi, and T. F. Kuech, "N-rich and dilute-nitride GaNx(AsSb)1−x on InP substrates," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest Series (CD) (Optica Publishing Group, 2007), paper CMN4.

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Abstract

GaAsNSb alloys have been demonstrated using MOCVD growth over a wide span of nitrogen composition. Dilute-nitride alloys hold potential for mid-IR emission using GaAsSbN/GaAsSb type-II QWs.

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