Abstract
A novel, high performance optoelectronic switch is introduced. The device is a Si- MOSFET with Ge gate that can be fabricated at the nanoscale with very low capacitance. Current gain of up to 1000× is demonstrated.
© 2007 Optical Society of America
PDF ArticleMore Like This
Ali K. Okyay, Abhijit J. Pethe, Duygu Kuzum, Salman Latif, David A. B. Miller, and Krishna C. Saraswat
JWA38 National Fiber Optic Engineers Conference (NFOEC) 2007
X. An, F. R. Beyette, S. A. Feld, K. Geib, C. W. Wilmsen, H. Y. Lee, M. J. Hafich, and G. Y. Robinson
WE15 Photonic Switching (PS) 1991
Yeul Na, Dany Ly-Gagnon, David A.B Miller, and Krishna C. Saraswat
JThA026 National Fiber Optic Engineers Conference (NFOEC) 2011