Add to BibSonomyAbstract
An integrated Ge-on-SOI photo-detector with an FET structure, based on secondary photo-conductivity is demonstrated. The Ge gate absorbs ~100nW of 1.55µm light, thereby modulating the conductance of the Silicon channel by a factor of 25.
© 2007 Optical Society of America
PDF ArticleMore Like This
Novel CMOS compatible cavity enhanced Ge/SOI photodetector based on secondary photoconductivity
Subal Sahni, Eli Yablonovitch, J Liu, and Ya-hong Xie
CThD3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006
Germanium-on-Silicon photo-detectors based on tiny micro-disk resonators
Haifeng Zhou, Tsungyang Liow, Xiaoguang Tu, Eujin Lim, Chao Li, Lianxi Jia, Ying Huang, Lianwee Luo, Xianshu Luo, Junfeng Song, Qing Fang, Mingbin Yu, and Guoqiang Lo
W2A.24 Optical Fiber Communication Conference (OFC) 2016
High-Performance Optical Receivers in CMOS Using Ge-on-SOI Detectors
C. L. Schow, S. J. Koester, L. Schares, and R. John
FTuG5 Frontiers in Optics (FiO) 2007