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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper CThK6

1.55 μm GaSb/AlGaSb MQW diode lasers grown on GaAs substrates using interfacial misfit (IMF) arrays

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Abstract

We report a GaSb/AlGaSb multi-quantum well diode laser emitting at 1550 nm at 77 K. The laser is grown directly on a GaAs substrate using interfacial misfit (IMF) arrays rather than thick metamorphic buffer layers.

© 2007 Optical Society of America

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