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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest Series (CD) (Optica Publishing Group, 2007),
  • paper JWA126

Carrier capture and recombination in 2.4µm GaSb-based type-I quantum well high power diode lasers

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Abstract

Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in laser heterostructures with reduced waveguide thickness.

© 2007 Optical Society of America

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