Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CFX5

Enhanced Electro-optic effect in InAs/GaAs Quantum Dots

Not Accessible

Your library or personal account may give you access

Abstract

The electro-optic properties of InAs/GaAs quantum dots are studied in an external Mach-Zehnder Interferometer setup. The InAs/GaAs quantum dots are found to increase modulation relative to bulk GaAs and exhibit an electro-optic coefficient of 26pm/V.

© 2008 Optical Society of America

PDF Article
More Like This
Quantum-Confined Stark Effect in Intersubband Transition in InAs/GaAs Quantum Dots

Xuejun Lu
QThI6 Quantum Electronics and Laser Science Conference (CLEO:FS) 2008

Linear electro-optic coefficient in multilayer self-organized InAs quantum dot structures

B. Imran Akca, Aykutlu Dana, Atilla Aydinli, Marco Rossetti, Lianhe Li, N. Dagli, and Andrea Fiore
JTuA114 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007

Modulation in InAs Quantum Dot Waveguides

B. Imran Akca, Aykutlu Dana, Atilla Aydinli, Marco Rossetti, Lianhe Li, Andrea Fiore, and N. Dagli
IWE4 Integrated Photonics and Nanophotonics Research and Applications (IPR) 2007

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.