Abstract
The electro-optic properties of InAs/GaAs quantum dots are studied in an external Mach-Zehnder Interferometer setup. The InAs/GaAs quantum dots are found to increase modulation relative to bulk GaAs and exhibit an electro-optic coefficient of 26pm/V.
© 2008 Optical Society of America
PDF ArticleMore Like This
Xuejun Lu
QThI6 Quantum Electronics and Laser Science Conference (CLEO:FS) 2008
B. Imran Akca, Aykutlu Dana, Atilla Aydinli, Marco Rossetti, Lianhe Li, N. Dagli, and Andrea Fiore
JTuA114 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007
B. Imran Akca, Aykutlu Dana, Atilla Aydinli, Marco Rossetti, Lianhe Li, Andrea Fiore, and N. Dagli
IWE4 Integrated Photonics and Nanophotonics Research and Applications (IPR) 2007