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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CFX5

Enhanced Electro-optic effect in InAs/GaAs Quantum Dots

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The electro-optic properties of InAs/GaAs quantum dots are studied in an external Mach-Zehnder Interferometer setup. The InAs/GaAs quantum dots are found to increase modulation relative to bulk GaAs and exhibit an electro-optic coefficient of 26pm/V.

© 2008 Optical Society of America

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