Size Effects and Light Extraction Efficiency Optimization of III-Nitride Light Emitting Diodes with SiO2 / Polystyrene Microlens Arrays

Yik-Khoon Ee; ±; Pisist Kumnorkaew; Ronald A. Arif; Hua Tong; James F. Gilchrist; Nelson Tansu

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper CMKK6

Size Effects and Light Extraction Efficiency Optimization of III-Nitride Light Emitting Diodes with SiO₂ / Polystyrene Microlens Arrays

Yik-Khoon Ee, ±, Pisist Kumnorkaew, Ronald A. Arif, Hua Tong, James F. Gilchrist, and Nelson Tansu

Conference on Lasers and Electro-Optics 2008

San Jose, California United States
4–9 May 2008
ISBN: 978-1-55752-859-9

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Novel LED and OLED Device Structures (CMKK)

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Y. Ee, ±, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, "Size Effects and Light Extraction Efficiency Optimization of III-Nitride Light Emitting Diodes with SiO2 / Polystyrene Microlens Arrays," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper CMKK6.

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Abstract

Optimization studies of InGaN quantum wells light emitting diodes employing SiO₂ / polystyrene microlens arrays are conducted. The use of microlens arrays leads to increase in light extraction efficiency by 2.7-times, in agreement with simulation.

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