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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CThS2

Fabrication of Site-Controlled, Highly Uniform, and Dense InGaN Quantum Dots

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We report fabrication of site-controlled, highly uniform and dense (>=1e10/cm2) InGaN multiple stacks of quantum dots using selective area epitaxy in MOCVD. The dot height and lateral dimension are 3 nm and 30 nm, respectively.

© 2008 Optical Society of America

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