An Investigation of Differences in Electron and Hole Confinement in InAs/InGaAsP Quantum Dash Lasers

S.C. Heck; S.B. Healy; S. Osborne; D.P. Williams; R. Fehse; E.P. O’Reilly; F. Lelarge; F. Poingt; F. Poingt; A. Accard; A. Accard; F. Pommereau; F. Pommereau; O. Legouezigou; O. Legouezigou; B. Dagens

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper CThY5

An Investigation of Differences in Electron and Hole Confinement in InAs/InGaAsP Quantum Dash Lasers

S.C. Heck, S.B. Healy, S. Osborne, D.P. Williams, R. Fehse, E.P. O’Reilly, F. Lelarge, F. Poingt, A. Accard, F. Pommereau, O. Legouezigou, and B. Dagens

Conference on Lasers and Electro-Optics 2008

San Jose, California United States
4–9 May 2008
ISBN: 978-1-55752-859-9

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S. C. Heck, S. B. Healy, S. Osborne, D. P. Williams, R. Fehse, E. P. O’Reilly, F. Lelarge, F. Poingt, A. Accard, F. Pommereau, O. Legouezigou, and B. Dagens, "An Investigation of Differences in Electron and Hole Confinement in InAs/InGaAsP Quantum Dash Lasers," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper CThY5.

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Abstract

We calculate that strain and confinement effects lead to similar conduction and valence density of states in InGaAsP quantum dashes. Room temperature threshold remains dominated by non radiative recombination, as in 1.5 μm quantum well lasers.

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