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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper CTuZ6

Room temperature, Sb-based monolithic EP-VCSEL at 2.3 µm including 2 n-type DBR

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Abstract

We demonstrate a 2.3 µm emission at RT under quasi-CW operation from a Sb-based monolithic VCSEL. The structure is composed of 2 n-doped AlAsSb/GaSb DBR, a type-I GaInAsSb/AlGaAsSb QWs active region and a tunnel junction.

© 2008 Optical Society of America

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