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Conferences > CLEO > 2008 > JThA > JThA16
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper JThA16

Carrier Leakage in GaInNAsSb Quantum Well Lasers

J. W. Ferguson, P.M. Smowton, P. Blood, J.A. Gupta, and G.C. Aers

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Abstract

We assess the non-radiative recombination mechanisms in GaInNAsSb structures by comparing p-doped, n-doped and un-doped material. Our results indicate a contribution from thermally activated leakage in 1.55µm GaInNAsSb Quantum well lasers at elevated temperatures.

© 2008 Optical Society of America

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