Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CMEE4
  • https://doi.org/10.1364/CLEO.2009.CMEE4

The Effects of Increasing AlN Mole Fraction on the Performance of AlGaN based Ultraviolet Light Emitting Diode Active Regions

Not Accessible

Your library or personal account may give you access

Abstract

Time-resolved photoluminescence and transmission electron microscopy results suggest that the density of point defects may have a more significant role than threading dislocations in the performance of UVLED AlGaN active regions emitting at shorter wavelengths.

© 2009 Optical Society of America

PDF Article
More Like This
Advantages of AlGaN-based deep ultraviolet light-emitting diodes with graded quantum structures in the active region

Huabin Yu, Zhongjie Ren, Zhongling Liu, Chong Xing, and Haiding Sun
AF1I.1 CLEO: Applications and Technology (CLEO:A&T) 2020

Diffusion-controlled effects of luminescent efficiency in InGaN/GaN light-emitting diodes

Y. S. Wang, N. C. Chen, and J. F. Chen
C338 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2011

Optimization of AlN substrate geometry for AlGaN-based Deep-Ultraviolet Light-Emitting Diodes

Manabu Taniguchi, Guo-Dong Hao, Kousei Nakaya, and Shin-ichiro Inoue
26P_114 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved