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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CMM1
  • https://doi.org/10.1364/CLEO.2009.CMM1

Progress in the Growth, Characterization and Device Performance for Nonpolar and Semipolar GaN-based Materials

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Abstract

Devices grown on c-plane GaN suffer from large internal electric fields due to discontinuities in spontaneous and piezoelectric polarization effects which cause charge separation between holes and electrons in quantum wells and limits the radiative recombination efficiency

© 2009 Optical Society of America

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