Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 2009 > CMM > CMM3
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CMM3
  • •https://doi.org/10.1364/CLEO.2009.CMM3

Electro-Optical Properties of n-InGaN/p-GaN LED with p-side Down With Varying Indium Composition

M. L. Reed, H. Shen, M. Wraback, A. Syrkin, and A. Usikov

Not Accessible

Your library or personal account may give you access

Abstract

The negative polarization charge at the n-InGaN/p-GaN interface of single heterojunction LEDs with p-side down are investigated for various In-compositions. We demonstrate peak emission wavelength blue-shift and intensity dependence on In-composition with increasing current density.

© 2009 Optical Society of America

PDF Article
More Like This
HVPE-grown n-InGaN/p-GaN Single Heterostructure LED With p-side Down

M.L. Reed, E.D. Readinger, A.V. Sampath, G.A. Garrett, H. Shen, M. Wraback, A. Syrkin, A. Usikov, and V.A. Dmitriev
CMF3 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007

“HVPE InGaN for LEDs- State of the art and horizons.”

Alexander L. Syrkin
PTuB4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009

HVPE InGaN for LEDs- State of the art and horizons

Alexander L. Syrkin
PTuB4 International Quantum Electronics Conference (IQEC) 2009

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use