Polarization-Enhanced Mg Doping in InGaN/GaN Superlattice for Green Light-Emitting Diodes

Hung-Cheng Lin; Geng-Yen Lee; Hsueh-Hsing Liu; Nai-Wei Hsu; Chin-Chi Wu; Jen-Inn Chyi; Jen-Inn Chyi; Jen-Inn Chyi

doi:10.1364/CLEO.2009.CMM4

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper CMM4
•https://doi.org/10.1364/CLEO.2009.CMM4

Polarization-Enhanced Mg Doping in InGaN/GaN Superlattice for Green Light-Emitting Diodes

Hung-Cheng Lin, Geng-Yen Lee, Hsueh-Hsing Liu, Nai-Wei Hsu, Chin-Chi Wu, and Jen-Inn Chyi

Conference on Lasers and Electro-Optics 2009

Baltimore, Maryland United States
31 May–5 June 2009
ISBN: 978-1-55752-869-8

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Polarization Effects in Nitride LEDs (CMM)

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H. Lin, G. Lee, H. Liu, N. Hsu, C. Wu, and J. Chyi, "Polarization-Enhanced Mg Doping in InGaN/GaN Superlattice for Green Light-Emitting Diodes," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper CMM4.

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Abstract

Electrical properties of low-temperature grown Mg-modulation-doped InGaN/GaN superlattice (MD-SLS) for green light-emitting diodes (LEDs) are investigated. Room-temperature Hall effect measurements indicate that the MD-SLS has conductivity comparable to that of high-temperature grown p-type GaN. The light output intensity of green LEDs with the p-InGaN/GaN MD-SLS is approximately doubled as compared with that of the LEDs with a high-temperature grown p-GaN.

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