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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CPDB7
  • https://doi.org/10.1364/CLEO.2009.CPDB7

Direct Band Gap Tensile-Strained Germanium

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Abstract

We report up to 2.3% biaxial tensile-strained Ge layers grown on InGaAs/GaAs buffer layers. Low-temperature photoluminescence shows a dramatic intensity increase for >2% tensile strained Ge, confirming the existence of a direct band gap Ge.

© 2009 Optical Society of America

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