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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CTuF2
  • https://doi.org/10.1364/CLEO.2009.CTuF2

Growths of InGaN Quantum Wells Light-Emitting Diodes on Nano-Patterned AGOG Sapphire Substrate Using Abbreviated Growth Mode

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Abstract

Nanoheteroepitaxy of InGaN-based light-emitting diodes on patterned AGOG sapphire by using abbreviated growth mode, leads to significant reduction in dislocation density and 24% increase in efficiency

© 2009 Optical Society of America

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