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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CTuV4
  • https://doi.org/10.1364/CLEO.2009.CTuV4

GaAs Nanoneedle Photodetector Monolithically Grown on a (111) Si Substrate by MOCVD

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Abstract

P-n junction GaAs nanoneedle photodetectors are monolithically grown on a (111) Si substrate by MOCVD with CMOS compatibility. A linear response of the photocurrent to the irradiance can be obtained under room temperature operation.

© 2009 Optical Society of America

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