Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > CLEO > 2009 > CWJ > CWJ5
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CWJ5
  • •https://doi.org/10.1364/CLEO.2009.CWJ5

Recent advances in all-epitaxial growth and properties of orientation-patterned gallium arsenide (OP-GaAs)

P.G. Schunemann, L. A. Pomeranz, Y.E. Young, L. Mohnkern, and A. Vera

Not Accessible

Your library or personal account may give you access

Abstract

We report on all-epitaxial growth of large diameter (3-inch), large aperture (>1.5mm thick), low-loss (<0.005cm−1) QPM GaAs. 2-μm-laser-pumped OPO performance was comparable to that of ZnGeP2.

© 2009 Optical Society of America

PDF Article
More Like This
All-epitaxial growth of low-loss, large-aperture orientation-patterned gallium arsenide (OPGaAs)

P. G. Schunemann, L. Mohnkern, A. Vera, D. C. Creeden, and T. M. Pollak
AWA2 Advances in Optical Materials (AIOM) 2009

Recent advances in all-epitaxial growth and processing of OP-GaAs

Peter G. Schunemann
ATu4A.6 Advanced Solid State Lasers (ASSL) 2018

All-epitaxial growth of orientation-patterned gallium phosphide (OPGaP)

Peter G. Schunemann, Lee Mohnkern, Alice Vera, Xiaoping S. Yang, Angie C. Lin, James S. Harris, Vladimir Tassev, and Michael Snure
ITh5B.5 Advances in Optical Materials (AIOM) 2012

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use